General Description. The AOD uses advanced trench technology and. This device is suitable for use in PWM, load. Top View.
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General Description. The AOD uses advanced trench technology and. This device is suitable for use in PWM, load. Top View. Drain-Source Voltage. Gate-Source Voltage. Continuous Drain. Current G. Pulsed Drain Current C. Pulsed Forward Diode Current C. Avalanche Current C. P DSM. Thermal Characteristics. Maximum Junction-to-Ambient A. Maximum Junction-to-Case B. Min Typ Max Units. V GS th. Gate Threshold Voltage. On state drain current. C iss Input Capacitance. C oss Output Capacitance.
C rss Reverse Transfer Capacitance. R g Gate resistance. Q g 10V Total Gate Charge. Q gs Gate Source Charge. Q gd Gate Drain Charge. Turn-On DelayTime. Turn-Off DelayTime. The value in any given application depends on. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a. The maximum current rating is limited by bond-wires. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz.
The SOA. Rev 7 : Feb Download D Datasheet. This device is suitable for use in PWM, load switching and general purpose applications. The SOA curve provides a single pulse rating.
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D452 Transistor. Datasheet pdf. Equivalent