G4PC50U PDF

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PD F. Generation 3. V CE on typ. Absolute Maximum Ratings. V CES. E ARV. T STG. Collector-to-Emitter Breakdown Voltage. Continuous Collector Current. Pulsed Collector Current Q. Clamped Inductive Load Current R. Gate-to-Emitter Voltage. Reverse Voltage Avalanche Energy S. Maximum Power Dissipation. Operating Junction and.

Storage Temperature Range. Soldering Temperature, for 10 seconds. Mounting torque, or M3 screw. Thermal Resistance. Case-to-Sink, Flat, Greased Surface. Junction-to-Ambient, typical socket mount. Emitter-to-Collector Breakdown Voltage T V CE ON. Collector-to-Emitter Saturation Voltage. V GE th. Gate Threshold Voltage. See Fig. E off. C ies. C oes. C res. Total Gate Charge turn-on. Gate - Emitter Charge turn-on. Gate - Collector Charge turn-on. Turn-On Delay Time.

Rise Time. Turn-Off Delay Time. Fall Time. Turn-On Switching Loss. Turn-Off Switching Loss. Total Switching Loss. Internal Emitter Inductance. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Energy losses include "tail". See fig. S Repetitive rating; pulse width limited by maximum. U Pulse width 5.

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