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Vishay Siliconix. Top View. Steady State. Drain-Source Voltage. Gate-Source Voltage. Pulsed Drain Current. Continuous Source Current Diode Conduction a, b. Maximum Power Dissipation a, b. Operating Junction and Storage Temperature Range. Maximum Junction-to-Ambient a. Maximum Junction-to-Foot Drain.
Surface Mounted on 1" x 1" FR4 board. Pulse width limited by maximum junction temperature. R thJA. R thJF. Document Number: D, Feb Test Conditions. Drain-Source Breakdown Voltage. Gate-Threshold Voltage. Gate-Body Leakage. Zero Gate Voltage Drain Current. On-State Drain Current a. V GS th. I GSS. I DSS. Drain-Source On-Resistance a. Forward Transconductance a. Diode Forward Voltage. Dynamic b. R DS on. Total Gate Charge.
Gate-Source Charge. Gate-Drain Charge. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Switching c. C iss. C oss. C rss. Turn-On Time. Turn-Off Time. Switching time is essentially independent of operating temperature. These are stress ratings only, and functional operation. Exposure to absolute maximum.
Document Number: SRev. Limits Typ. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Vishay Siliconix. Top View. Steady State. Drain-Source Voltage. Gate-Source Voltage.
SI2323 MOSFET. Datasheet pdf. Equivalent
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SI2323DS MOSFET. Datasheet pdf. Equivalent